首页> 外文OA文献 >Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

【2h】

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

机译：分层BI2O2SE雪崩光电二极管的内在载波乘法，增益带宽产品超过1 GHz

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Vinod K. Sangwan; Joohoon Kang; David Lam; J. Tyler Gish; Spencer A. Wells; Jan Luxa; James P. Male; G. Jeffrey Snyder; Zdeněk Sofer; Mark C. Hersam;
展开▼
作者单位

展开▼
年度 2020
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz [J] . Vinod K.Sangwan, Mark C.Hersam, Joohoon Kang, 纳米研究（英文版） . 2021,第006期

机译：分层BI2O2SE雪崩光电二极管的内在载波乘法，增益带宽产品超过1 GHz
2. Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz [J] . J.-W. Shi, Y.-S. Wu, Z.-R. Li, IEEE Photonics Technology Letters . 2007,第期

机译：冲击电离引起的基于Si-SiGe的雪崩光电二极管的带宽增强，该二极管工作在830 nm的波长下，增益带宽积为428 GHz
3. Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz [J] . Shi J.-W., Wu Y.-S., Li Z.-R., IEEE Photonics Technology Letters . 2007,第7期

机译：冲击电离引起的基于Si-SiGe的雪崩光电二极管的带宽增强，该二极管工作在830 nm的波长下，增益带宽积为428 GHz
4. Silicon-contacted waveguide integrated Ge/Si avalanche photodiode with 32 GHz bandwidth and multiplication gain > 8 [C] . Srinivasan Ashwyn Srinivasan, Peter De Heyn, Gaspard Hiblot, European Conference on Optical Communication . 2019

机译：硅接触波导集成Ge / Si雪崩光电二极管，带宽32 GHz，倍增增益> 8
5. Resonant-cavity separate absorption and multiplication avalanche photodiodes with high-speed and high-gain-bandwidth product [D] . Nie, Hui 1998

机译：具有高速和高带宽积的谐振腔分离吸收和倍增雪崩光电二极管
6. Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency [O] . Jianquan Kou, KangKai Tian, Chunshuang Chu, 2019

机译：高紫外线检测效率的4H-SiC分离吸收电荷和倍增雪崩光电二极管结构的优化策略
7. InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product [O] . Xie S., Zhou X., Zhang S., 2016

机译：具有高增益带宽积的InGaas / alGaassb雪崩光电二极管
8. Design of In GaAs/Si avalanche photodetectors for 400 GHz gain-bandwidth product [R] . Weishu Wu, Aaron R. Hawkins, John E. Bowers 1997

机译：用于400 GHz增益带宽积的In Gaas / si雪崩光电探测器的设计

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

著录项

引文网络

相似文献

相关主题

期刊订阅