X-ray Multiple Diffraction in Renninger Scanning Mode: Simulation of DataRecorded Using Synchrotron Radiation

摘要

The application limit of the MULTX program for simulating Renninger scanning X-ray multiple diffraction data is extended in order to simulate Renninger scans for semiconductor single-crystal and heteroepitaxial structures recorded using synchrotron radiation. The experimental synchrotron radiation Renninger scan for InP(006) bulk material is taken as the standard to analyze the effects of both the polarization factor and diffracted-beam path length. The polarization of the synchrotron radiation beam is considered using a matrix approach. Renninger scans of AlGaInAs quaternary layer structures, simulated with the MULTX program, shows a very good agreement (R=0.085) with the corresponding experimental data.