Influence of Wafer Thickness on the Performance of Multicrystalline SI SolarCells: An Experimental Study

摘要

The influence of the thickness of silicon solar cells has been investigated usingneighboring multicrystalline silicon wafers with thickness ranging from 150 to 325 micrometers. For silicon solar cell structures with a high minority carrier diffusion length one expects that J would decrease as the wafer becomes thinner due to a shorter optical path length. It was found experimentally that J is nearly independent of the thickness of the solar cell, even when the minority carrier diffusion length is about 300 micrometers. This indicates that the A1 rear metallisation acts at a good back surface reflector. A decrease in J is observed only if the wafer thickness becomes less than about 200 micrometers.