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Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing

机译:使用跨晶片背压差来影响化学机械抛光性能的方法和装置

摘要

Methods and apparatus for planarizing the surface of a semiconductor wafer by applying non-uniform pressure distributions across the back side of the wafer are disclosed. According to one aspect of the present invention, a chemical mechanical polishing apparatus for polishing a first surface of a semiconductor wafer includes a polishing pad which polishes the first surface of the semiconductor wafer. The apparatus also includes a first mechanism which is used to hold, or otherwise support, the wafer during polishing, and a second mechanism that is used to apply a non-uniform pressure distribution through the first mechanism, directly onto a second surface of the wafer. The second mechanism is further used to facilitate polishing the first surface of the semiconductor wafer such that the first surface of the semiconductor wafer is evenly polished. In one embodiment, the second mechanism is arranged to apply both positive pressure and negative pressure substantially simultaneously across the second surface of the semiconductor wafer.
机译:公开了通过在晶片的背面上施加不均匀的压力分布来平坦化半导体晶片的表面的方法和设备。根据本发明的一个方面,用于抛光半导体晶片的第一表面的化学机械抛光设备包括抛光垫,该抛光垫抛光半导体晶片的第一表面。该设备还包括用于在抛光过程中保持或支撑晶片的第一机构,以及用于通过第一机构将不均匀压力分布直接施加到晶片第二表面上的第二机构。 。第二机制还用于促进抛光半导体晶片的第一表面,使得半导体晶片的第一表面被均匀地抛光。在一个实施例中,第二机构被布置为基本上同时在半导体晶片的第二表面上施加正压和负压。

著录项

  • 公开/公告号US6531397B1

    专利类型

  • 公开/公告日2003-03-11

    原文格式PDF

  • 申请/专利权人 LSI LOGIC CORPORATION;

    申请/专利号US19980005364

  • 发明设计人 RONALD J. NAGAHARA;DAWN M. LEE;

    申请日1998-01-09

  • 分类号H01L213/02;

  • 国家 US

  • 入库时间 2022-08-22 00:07:06

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