Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

摘要

Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiN