Influence of Wafer Thickness on the Performance of Multicrystalline Si Solar Cells: an Experimental Study

摘要

The influence of the thickness of silicon solar cells has been investigated using neigh-bouring multicrystalline silicon wafers with thickness ranging from 150 to 325 mum. For silicon solar cell structures with a high minority-carrier diffusion length one expects that J_sc would decrease as the wafer becomes thinner due to a shorter optical path length. It was found experimentally that J_sc is nearly independent of the thickness of the solar cell even when the minority-carrier diffusion length is about 300 mum. This indicates that the Al rear metallisation acts as a good back surface reflector. A decrease in J_sc is observed only if the wafer thickness becomes less than about 200 mum. The observed trend in V_oc as a function of the wafer thickness has been explained with PC1D modelling by a minority-carrier diffusion length in the Al-doped BSF which is small in relation to the thickness of the BSF This effectively increases the recombination velocity at the rear of the cell We have shown that the efficiency of solar cells made with standard industrial processing is hardly reduced by reducing the wafer thickness. Solar cell efficiencies might be increased by better rear surface passivation.