Industrial Preparedness Study on Transistors and Automatic Machinery for Their Manufacture Quarterly Report No.7 Period Covered 28 September 1956 to December 1956

摘要

A-l Observations made as the result of studies concerned with silicon crystal evaluation are discussed, together with a ten¬tative explanation of the variations observed.nA-2 The purpose of the Hall mobility measurement and the life-tine measurement as additional controls for the quality of sili¬con crystals is given.nA-3 Electrical parameters which are affected by the sealing operation are noted.nA-4 The effects of environment on the QC 131 silicon transistor, which includes steam cycling, high temperature storage and room temperature storage are discussed*nA-5 The results of tests and investigations pertinent to the problem of deterioration in the QC 131 transistor are reported, in addition to problems encountered during these same investiga¬-tions .nA-6 The problem of high extrinsic base resistance in the QC 131 is discussed.nA-7 Investigations performed and conclusions reached by two independent groups relative to the basecoating problem are reported.nA-8 The results of the analysis of QC 131 rejects as an aid to process improvement are discussed.