FINAL FEASIBILITY REPORT ON INDUSTRIAL PREPAREDNESS STUDY ON DIFFUSED SEMICONDUCTOR DEVICES

摘要

Diffused base-Jet plated emitter and collector junction transistors have been developed for fulfilling the speci¬fications for a germanium transistor 12.5 Mc amplifier per SD Project 509-77 (PROP) Device 5, and a germanium tran¬sistor video amplifier per SD Project 509-77 (PROP) Device 9 (See Appendix I). This report includes the design consid¬erations, a summary of the manufacturing techniques with production feasibility, and a statistical evaluation of laboratory-made samples. The target specifications on these devices are also given (See Appendix II).