DEPENDENCE OF METAL-TO-SEMICONDUCTOR CONTACT RESISTANCE UPON CONTACT LOADING

摘要

A study has been conducted on the variation of contact resistance of moderate area metal-to-semiconductor contacts with repeated vari¬able loading. The spreading resistance has been shown to be modified by the injection of minority carriers at the contact. The piezoresistance matrix is used to study the effect of contact stress on the semi-conductor resistivity. The apparatus and experimental procedures used are described. The mechanism of a large observed change of con¬tact resistance with loading has been shown to be due to the change of the effective contact area. Several applications are discussed briefly.