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BUMPED CONTACTS FOR METAL-TO-SEMICONDUCTOR CONNECTIONS, AND METHODS FOR FABRICATING SAME

机译:用于金属至半导电体连接的凸形接触件及其制造方法

摘要

An improved electrical connection between a metal surface and a semiconductor surface is provided by the deposition of a conductive dimple on the metal surface, whereby the conductive dimple is interposed between the metal surface and the semiconductor substrate. For example, a conductive trace deposited on an insulating substrate may have a conductive dimple formed thereon. A semiconductor substrate, such as a silicon substrate, may be bonded to the insulating substrate over at least a portion of the metal trace having the dimple thereon to form an electrical connection between the semiconductor substrate and the conductive trace.
机译:通过在金属表面上沉积导电凹坑来提供金属表面与半导体表面之间的改进的电连接,由此将导电凹坑置于金属表面与半导体衬底之间。例如,沉积在绝缘基板上的导电迹线可具有在其上形成的导电凹痕。诸如硅衬底的半导体衬底可以在其上具有凹坑的金属迹线的至少一部分上结合至绝缘衬底,以在半导体衬底与导电迹线之间形成电连接。

著录项

  • 公开/公告号EP1127375B1

    专利类型

  • 公开/公告日2008-12-17

    原文格式PDF

  • 申请/专利权人 HONEYWELL INC;

    申请/专利号EP19990950298

  • 发明设计人 TURNER GARY B.;

    申请日1999-10-13

  • 分类号H01L23/498;H01L23/48;H01L21/58;B81B7/00;

  • 国家 EP

  • 入库时间 2022-08-21 19:20:33

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