Semiconductor Measurement Technology:Suppression of Premature Dielectric Breakdown for High-Voltage Capacitance Measurements.

摘要

Surface-initiated premature dielectric breakdown is encountered in extended-range MIS C(V) measurements at applied-bias voltages above some sample-dependent threshold value, e.g., 3to 5kV across a 150-micrometer-thick wafer of sapphire. It is necessary to suppress this premature breakdown in order that a much larger applied-bias voltage may be used without damaging the sample. This may be accomplished by eliminating the air space adjacent to the sample surface at the junction of the dielectric and the electrode edge. A simple,easy-to-use apparatus (sample holder and probe assembly) which allows this to be done conveniently and quickly by using a silicone rubber washer to cover the edge of the electrode and the adjacent area is described. Construction details of the apparatus and a test chamber which have been tested to 30kV are provided in an appendix.