Extended Range MIS C(V) Measurement: A Technique for Monitoring Semiconductor Device Processing.

摘要

Equipment has been developed which allows the straightforward implementation of extended-range MIS C(V) and G(V) measurements for a variety of applications at applied-bias voltage magnitudes as large as 25kV. This report briefly summarizes the objectives and the resulting accomplishments leading to the development of the apparatus. It also provides corrections and additions to previously published documents to aid in the construction and operation of the apparatus.