ESD-Caused Latent Failures, Study Effort

摘要

This study was intended to prove or disprove the existence of ESD-caused latent failures on semiconductor devices. The parts studied were 3N128 MOSFET and the 54L04 low power TTL integrated circuit. A sampling of each device was stressed by an ESD pulse to various levels of degredation. Life tests were conducted at 25C and 75C for 480 hours minimum at each temperature and the results of these tests compared to an unstressed control sample of devices.