Quantum Interference and Confinement Effects in Narrow Channel Si-MOSFET's

摘要

Experimental studies are discussed of the electrical transport phenomena in the mesoscopic regime in two types of narrow channel Si-MOSFET's, single-channel MOSFET's and multiple-channel MOSFET's with a dual-gate. Universal conductance fluctuations, weak localization, quantum confinement effects and lateral superlattice effects in the conductance have been investigated. Contents include: Theoretical Background; Narrow channel Si-MOSFET's for quasi-one-dimensional quantum transport; The temperature dependence of universal conductance fluctuations in narrow Si inversion layers; Universal fluctuations in the conductance of narrow Si inversion layers as a function of the Fermi energy:temperature dependence; One-dimensional subband effects in the conductance of multiple quantum wires in Si-MOSFET's; Enhancement of weak localization in a Si lateral superlattice device; Fluctuations in the transconductance of multiple quantum wires in Si-MOSFET's.