Si-SiO sub 2 Interfaces: A HRTEM (High Resolution Transmission Electron Microscopy) Study

摘要

A High Resolution Transmission Electron Microscopy (HRTEM) study of the Si-SiO sub 2 interfaces is reported here. The study has been carried out on the thermal oxidation of (1) Si and (2) Ge implanted Si. Evolution of the Si-SiO sub 2 interface with oxide thickness and the presence of small amounts of Ge, i.e., one mono-layer at the interface and its influence on the oxidation kinetics is discussed. (ERA citation 12:043620)