A STATIC TRANSISTOR MODEL FOR COMPUTER AIDED DESIGN

摘要

As a result of the growth of interest in more accurate transistor models, a study has been made of a static or d. c. model of a high frequency transistor. Interest has been concentrated upon the Active region of operation together with the Avalanche region. It is proposed that the model will be useful in network analysis programs and will be generally applicable to all transistors of a certain type.nThe model elements are determined from the pulsed V - I characteristics of the transistor and the element values so found are also confirmed by high frequency small signal measurements. It is intended that the measurement system used could be fully automated and the model element values found by the use of a computer routine.