Ellipsometric Measurements of Epitaxial GAAS Layers on a GAAS Substrate

摘要

An extensive examination of ellipsometric equations for anisotropic surfaces and films is reported. It is shown that the reflection matrix can be calculated by writing Maxwell's equations in 6 x 6 matrix form and by applying appropriate boundary conditions at proper points in the development of the formalism, reducing the equation for the propagation of light to an eigenvalue problem using a 4 x 4 matrix.