Varactor Tuned X-Band FET (Field Effect Transistors) Oscillator

摘要

A variable frequency X-band oscillator was designed. The oscillator is based on field effect transistors and is voltage tuned with a varactor. The oscillator may be a unit on its own or integrated into a larger subsystem, which reduces the overall size and weight. Several designs were implemented using thin film technology and evaluated using two transistor types of the same generic family. The results were fed back into the design to improve overall performance and understanding of the process of implementation. The result is a 1GHz bandwidth tunable oscillator with a center frequency variable with bias. There is a substantial sensitivity of output frequency with bias and hence additional measurements were made. The effect of changing bias on performance is calculated.