X-Band Varactor Tuned Monolithic GaAs FET Oscillators

摘要

The design, fabrication and performance of X-band varactor-tuned monolithic GaAs FET oscillators is described. The design is based on small and large signal device characteristics. A manufacturable process is used in order to realize the oscillators. The experimental performance agrees with the theoretical expectations within 0.2% for the oscillation frequency and 4% for the tuning bandwidth. Best tuning bandwidth and output power values exceeded 2 GHz and 28mW. Waver dispersion depends on oscillator characteristics and varies between + or - 1% and + or - 7.7% for oscillators with a varactor in the FET source. The rf water yield is 65%. Finally, noise and temperature characteristics are given. Keywords include: X-band, Varactor-tuned, Monolithic GaAs FET oscillators. Reprints. (rh)