Tunable Antireflection Layers for Planar Bolometer Arrays

摘要

It remains a challenge to obtain high-efficiency coupling of far-infrared through millimeter radiation to large-format detector arrays. The conventional approach of increasing detector coupling is to use reflective backshorts. However, this approach often results in excessive systematic errors resulting from reflections off the backshort edge. An alternate approach to both increasing quantum efficiency and reducing systematics associated with stray light is to place an antireflective coating near the front surface of the array. When incorporated with a resistive layer and placed behind the detector focal plane, the AR coating can serve to prevent optical ghosting by capturing radiation transmitted through the detector. By etching a hexagonal pattern in silicon, in which the sizes of the hexes are smaller than the wavelength of incident radiation, it is possible to fabricate a material that has a controllable dielectric constant, thereby allowing for simple tunable optical device fabrication. To this end, we have fabricated and tested tunable silicon "honeycomb" AR layers and AR/resistive layer devices. These devices were fabricated entirely out of silicon in order to eliminate problems associated with differential contraction upon detector cooling.