Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement

摘要

A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.