20Ghz Power GaAS FET (Field Effect Transistors) Development.

机译：20Ghz功率Gaas FET（场效应晶体管）开发。

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The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

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crandell, m.;
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年度 1986
页码 1-52
总页数 52
原文格式 PDF
正文语种 eng
中图分类工业技术 ;
关键词
Field effect transistors; Gallium arsenides; Gates (Circuits); Transmitters; Communication satellites; Fabrication; Wafers;

机译：场效应晶体管;砷化镓;栅极（电路）;发射器;通信卫星;制造;晶圆;

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专利

1. Determination of parameters of a nonlinear model of GaAs high-power MESFET field transistors [J] . Bakhvalova S.A. Semiconductors . 2010 ,第13期

机译：GaAs大功率MESFET场效应晶体管非线性模型参数的确定
2. Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET [J] . Bayani Amir Hossein, Dideban Daryoosh, Akbarzadeh Mojtaba, ECS Journal of Solid State Science and Technology . 2017 ,第4期

机译：对GAA-CNTFET的门 - 全环锗纳米管域效应晶体管（Gaa-Gentfeet）的基准性能
3. Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. I. Modulation-doped field effect transistors (MODFETs) [J] . Lin H.-K., Abdel-Motaleb I.M. IEE Proceedings. Part G, Circuits, Devices and Systems . 1991 ,第6期

机译：GaAs场效应晶体管的小信号非准静态模型，可在SPICE中实现。 I.调制掺杂的场效应晶体管（MODFET）
4. Design optimization InGaAs/GaAsSb-based heterojunction Gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET) [C] . Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, 2018 International Conference on Electronics, Information, and Communication . 2018

机译：设计优化基于InGaAs / GaAsSb的异质结全方位栅（GAA）拱形隧道效应场效应晶体管（A-TFET）
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors [O] . Mantu K. Hudait, Michael Clavel, Patrick Goley, -1

机译：AlAs / GaAs缓冲架构在Si上外延Ge的异质集成：适用于低功率鳍式场效应晶体管
7. High-performance of InGaAs/GaAs doped-channel heterostructure field-effect transistor (HFET) prepared by MOCVD [O] . Liu W. C., Laih L. W., Wu C. Z., 1996

机译：MOCVD制备的高性能InGaAs / GaAs掺杂沟道异质结构场效应晶体管（HFET）
8. 0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant [R] . Baca, A. G. , Sherwin, M. E. , Zolper, J. C. , 1997

机译：具有DFET阈值调整注入的0.5微米E / D alGaas / Gaas异质结构场效应晶体管技术

20Ghz Power GaAS FET (Field Effect Transistors) Development.

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