Influence de l'Enrichissement Superficiel en Arsenic sur l'Ohmicite du Contact n-GaAs: In/Au (Influence of Arsenic Superficial Enrichment on the Ohmicity of the n-GaAs:In/Au Contact)

摘要

Procedures for arsenic superficial enrichment are described, examining in particular the effect of thermal treatment of anodic oxides. A technique to produce Au:In/As:GaAs electric contacts and their electrical characterization are described. A morphological and structural metal surface investigation is carried out to relate the linearity of contact conductivity to the interface chemistry of the heterostructure. The conductivity of heat treated In:Au/n-GaAs heterostructures appears to be related to the formation of a heterojunction of the type In(x)Ga(1-x)As which could favor As enrichment of the GaAs.