Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation

摘要

Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the electrically conductive bonding layer. After a 500-hour soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hour anneal. Further durability testing of this high temperature interconnection technology is also discussed.