TID, SEE and radiation induced failures in advanced flash memories

机译：高级闪存中的TID，sEE和辐射引发的故障

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摘要

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the respons of radiation-induced failures.

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Nguyen, D. N.; Scheick, L. Z.;
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年度 2003
页码 1-17
总页数 17
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
FAILURE; TRAVELING IONOSPHERIC DISTURBANCES; SEE; TID; flash memories;

机译：失败;旅行中的电离层扰动;看到; TID;闪存;

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专利

1. Analysis of the TID Induced Failure Modes in NOR and NAND Flash Memories [J] . Yihua Yan, Wei Chen, Ruyu Fan, Nuclear Science, IEEE Transactions on . 2013,第1期

机译：NOR和NAND闪存中TID引发的故障模式分析
2. SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory [J] . Oldham T. R., Ladbury R. L., Friendlich M., IEEE Transactions on Nuclear Science . 2006,第期

机译：先进的商用2Gbit NAND闪存非易失性存储器的SEE和TID表征
3. A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory [J] . Qiao Fengying, Pan Liyang, Wu Dong, Journal of Semiconductors . 2014,第2期

机译：基于PD-SOI的DTI-LOCOS组合交叉隔离技术可最大程度地减少TID辐射引起的高密度内存泄漏
4. TID, SEE and radiation induced failures in advanced flash memories [C] . Nguyen, D.N., Scheick, . 2003

机译：TID，SEE和辐射导致的高级闪存故障
5. Wafer probe and package test failure analysis of NAND flash memory [D] . Kalva, Deepa. 2007

机译：NAND闪存的晶片探头和包装测试失败分析
6. Hypoxia-induced treatment failure in advanced squamous cell carcinoma of the uterine cervix is primarily due to hypoxia-induced radiation resistance rather than hypoxia-induced metastasis [O] . E K Rofstad, K Sundfør, H Lyng, 2000

机译：低氧引起的晚期宫颈鳞癌治疗失败主要是由于低氧引起的放射抵抗而不是低氧引起的转移
7. TID, SEE and Radiation Induced Failures in Advanced Flash Memories [O] . D. N. Nguyen, L. Z. Scheick 2015

机译：高级闪存中的TID，sEE和辐射引发的故障

TID, SEE and radiation induced failures in advanced flash memories

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