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Fabrication and characteristics of microwave backward diodes in indium arsenide

机译：砷化铟微波反向二极管的制备及特性

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摘要

Backward diodes in indium arsenide for microwave mixing

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作者
Hopkins, J. B.;
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年度 1969
页码 1-25
总页数 25
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
ARSENIC; INDIUM; MICROWAVES; TUNNEL DIODES; CAPACITANCE; FABRICATION; MIXING; SEMICONDUCTOR DEVICES;

机译：砷;铟;微波炉;隧道二极管;电容;制造;混合;半导体器件;

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专利

1. Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions [J] . Journal of Applied Physics . 1979,第5期

机译：氧化铟锡/磷化铟和氧化铟锡/砷化镓结的太阳能电池特性和界面化学
2. Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode [J] . Seong-Uk Yang, Seung-Ha Choi, Jongtaek Lee Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2013,第Null期

机译：深度可控的超浅铟镓锌氧化物/砷化镓异质结二极管
3. GROWTH AND INVESTIGATION OF INDIUM ARSENIDE?BASED DIODE HETEROSTRUCTURES FOR MID?INFRARED APPLICATION [J] . Gevorkyan V.A., Gambaryan K.M., Kazaryan M.S. Armenian Journal of Physics . 2008,第1期

机译：砷化铟的二极管异质结构在中红外应用中的生长与研究
4. Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications [C] . Pawlik D.J., Thomas P., Barth M., Device Research Conference: Conference Digest . 2009

机译：硅带间隧道二极管上的砷化铟镓，用于基于NDR的存储器和陡峭的亚阈值斜率晶体管应用
5. Design and characterization of indium gallium arsenide/aluminum arsenide/indium arsenide resonant tunneling diode. [D] . Bhandaru, Shweta. 2005

机译：砷化铟镓/砷化铝/砷化铟共振隧穿二极管的设计与表征。
6. RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System [O] . Farahiyah Mustafa, Abdul Manaf Hashim 2014

机译：直接辐射的片上砷化镓肖特基二极管和天线的射频到直流特性用于近距离通信系统
7. Fabrication of Indium Arsenide Quantum Dot Structure for Semiconductor Optical Ampliers [O] . Jussila Henri 2010

机译：半导体光放大器砷化铟量子点结构的制作
8. Fabrication and Characteristics of Microwave Backward Diodes in Indium Arsenide [R] . Hopkins, J. B. 1969

机译：砷化铟微波后向二极管的制备及特性

Fabrication and characteristics of microwave backward diodes in indium arsenide

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