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Method for combined fabrication of indium gallium arsenide / indium phosphide avalanche photodiodes and P-I-N photodiodes
Method for combined fabrication of indium gallium arsenide / indium phosphide avalanche photodiodes and P-I-N photodiodes
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机译：砷化铟镓/磷化铟雪崩光电二极管和P-I-N光电二极管的组合制造方法
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摘要
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
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