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The piezoresistive effect in electron irradiated silicon and its application to the improvement of semiconductor strain gages

机译：电子辐照硅中的压阻效应及其在半导体应变计改进中的应用

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摘要

Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strain gages

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作者
Littlejohn, M. A.; Loggins, C. D., Jr.;
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年度 1970
页码 1-175
总页数 175
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
ELECTRON IRRADIATION; PIEZORESISTIVE TRANSDUCERS; SILICON; STRAIN GAGES; AXIAL STRESS; CRYSTAL LATTICES; HALL EFFECT; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES;

机译：电子辐射;压敏传感器;硅;应变计;轴向应力;水晶格子;霍尔效应;数学模型;半导体器件;

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8. THE PIEZORESISTIVE EFFECT IN ELECTRON IRRADIATED SILICON AND ITS APPLICATION TO THE IMPROVEMENT OF SEMICONDUCTOR STRAIN GAGES [R] . C. D. Loggins, M. A. Littlejohn 1970

机译：电子辐照硅的压电效应及其在半导体应变片改进中的应用

The piezoresistive effect in electron irradiated silicon and its application to the improvement of semiconductor strain gages

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