THE PIEZORESISTIVE EFFECT IN ELECTRON IRRADIATED SILICON AND ITS APPLICATION TO THE IMPROVEMENT OF SEMICONDUCTOR STRAIN GAGES

摘要

The application of mechanical stress to silicon changes Its resistivity. This phenomenon is called plezoreslstivity. The amount by which the resistivity is changed Is Influenced first of all by the type of stress, the magnitude of the stress, and the orientation of the stress relative to the crystal lattice axes of the silicon sample.nHere piezoresistivity will be defined as that scalav quantity which is equal to the fractional change in resistivity due to an applied stress divided by that applied stress. Plezo¬reslstivity is largest In silicon for stresses applied In a <100> lattice direction, that is for a stress applied parallel for one of the crystal lattice axes. Silicon's gage factor, which is proportional to the plezoreslstivity, is nearly two orders of magnitude larger for this orientation than that of a metal, since for a metal the gage factor is due only to a change In the geometry of the sample with stress.