Laser drilling of vertical vias in silicon

摘要

Any advance beyond the density of standard 2D Multichip Modules (MCM) will require a vertical interconnect technology that can produce reliable area array interconnection with small feature sizes. Laser drilled vertical vias have been controllably produced in standard silicon (Si) wafers down to 0.035mm (0.0014 inches) in diameter. Several laser systems and their system parameters have been explored to determine the optimum parametric set for repeatable vias in Si. The vias produced have exhibited clean smooth interior surfaces with an aspect ratio of up to 20:1 with little or no taper. All laser systems used, their system parameters, design modifications, theory of operation, and drilling results are discussed.