QUANTUM DOT LASERS INTEGRATED ON SILICON SUBMOUNT WITH MECHANICAL FEATURES AND THROUGH-SILICON VIAS

摘要

There is provided a laser comprising a silicon substrate having a first surface and a second surface opposite to the first surface; a III-V semiconductor material layer, bonded with the first surface of the silicon substrate; and a quantum dot layer included in one or more layers grown from the III-V semiconductor material layer at a predetermined height relative to the first surface of the silicon substrate.