Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

摘要

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and tune needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.