Method for processing, in particular separating, a substrate by means of laser-induced deep reactive etching

摘要

A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an anisotropic material by etching at an etching rate (r) and an etching duration (t). Machining parameters are set according to a condition: 1>d/(R*t)>10−5.