Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters

摘要

The authors have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS's. The presence of an InGaAsSb interface layer was indicated by x-ray diffraction for samples grown under non-optimized conditions. Interfacial layers were also identified with transmission electron microscopy (TEM). Two types of interfaces were observed by TEM. The different contrasts observed by TEM could be due to a difference in composition at the interfaces. The width of the x-ray peaks can be explained by a variation of the layer thickness.