Extreme ultraviolet lithography for 0.1(micro)m devices

摘要

Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading211u001esuccessors to optics for 0.1(micro)m IC fabrication. Its strongest attribute is 211u001ethe potential to scale to much finer resolution at high throughput. As such, this 211u001etechnique could meet the lithography needs for Si ULSI down to fundamental device 211u001elimits. In the US, Lawrence Livermore, Sandia and Lawrence Berkeley Laboratories 211u001eare participating in an industry funded research effort to evolve EUV technology 211u001eand build a prototype camera for lithographic exposure. More recently, both 211u001eEurope and Japan have initiated government/industry sponsored programs in EUVL 211u001edevelopment. This talk focuses on the program successes to date, and highlights 211u001esome of the challenges that still lie ahead.