Characterization of Epitaxial Growth of Semiconducting Rhemium 'Disilicide' Films

摘要

We have characterized, through transmission electron microscopy (TEM), theReSi(sub 2-x) thin films grown by reactive deposition on (001) Si. ReSi(sub 2.x) thin films exhibit a distorted body-centered tetragonal MoSi(sub 2)-type structure, and have excellent epitaxy on (001) Si since the face diagonal of the Si unit cell is equal to the c lattice parameter of silicide. The Si-deficient composition in the 'disilicide' may be accommodated by collapse and shear of missing Si planes to form planar faults. Kirkendall voids are also observed at the film-substrate interface. The engineering of the defect and interface structures of these complex, non-stoichiometric silicides for optimized optoelectronic properties are discussed.