Influence of Doping with In and Ga and with In + Cl and Ga + Cl on the Photoconductivity of CdS Sinter Layers

摘要

The chemical sensitization procedure was used to incorporate In, Ga and In + Cl and Ga + Cl into CdS photoresistors. CdS layers with a large photoelectric area and a high degree of light sensitivity can be produced by using the doping mentioned above. The resistance and sensitivity of the CdS layers can be varied by several orders of magnitude through changing the doping concentration as well as the temperature and duration of annealing. The light sensitivity of a doped layer exceeds that of an undoped one by 3 to 4 orders of magnitude. The layers are very stable and retain their properties even after loads of long duration. The light sensitive area can measure several cm exp 2 . (ERA citation 09:005152)