Infrared Absorption Spectrum of Free Carriers in Polar Semiconductors. Final Report, July 1, 1983-June 30, 1984

摘要

A quantum mechanical expression for the real part of the refractive index of a III-V, II-VI, or IV-VI binary, ternary, or quaternary semiconductor has been derived which predicts the dispersion observed near the fundamental absorption edge. The calculation is made in terms of measurable experimental quantities only, with no adjustable parameters, using the Kane theory of the band structure. Results have been calculated for a wide variety of materials, and comparison made with available experimental data. An expression for the nonlinear intensity dependent refractive index is given. An extension of the Drude theory has been made which predicts the quantum result for the complex dielectric constant at high frequencies and reduces to the usual quasiclassical result in the far infrared. The results of this research are expected to find application in implementation of optical processing systems in the infrared and in the design of integrated circuits, systems, and devices based on the III-V, II-VI or IV-VI compounds. 20 references. (ERA citation 09:034763)