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Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

机译:In-polar p型InN中自由载流子性质的红外椭圆偏振和近红外-真空-紫外椭圆偏振研究

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摘要

We apply infrared spectroscopic ellipsometry (1RSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1×l0~(18)cm~(-3) and 3×10~(19)cm~(-3). The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.
机译:我们将红外光谱椭偏仪(1RSE)与近红外光谱结合到真空紫外椭偏仪上,研究了一组Mg掺杂的不同Mg浓度的极性InN样品中空穴的浓度和迁移率。在IRSE光谱中,Mg浓度在1×10〜(18)cm〜(-3)和3×10〜(19)cm〜(-3)之间发现P型行为。使用考虑了声子-等离子体激元耦合的参数化模型来确定自由载流子参数。从NIR-VUV数据中提取有关层厚度,表面粗糙度和InN结构性质的信息,并将其与IRSE结果相关。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.;

    Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.;

    Institute Tecnologico e Nuclear, Sacavem, Portugal;

    Institute Tecnologico e Nuclear, Sacavem, Portugal,Department of Physics, Chemistry and Biology, Linkoeping University, Sweden;

    State Key Lab of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing, China;

    Graduate School of Electrical and Electronics Engineering, Venture Business Laboratory, Chiba University, Chiba, Japan;

    Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;材料;
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