Heavy Ion Rutherford Backscattering Spectrometry (HIRBS) For the Near Surface Characterization of Electronic Materials

摘要

The use of heavy ion projectiles for Rutherford Backscattering Spectrometry (RBS) provides several potential advantages over conventional RBS with sup 4 He beams. Among these advantages are the improved mass resolution for heavy elements (>50 amu) and the increased accessible depth of analysis. A series of experiments using 20-MeV sup 16 O beam backscattered from a variety of targets was performed in order to examine the potential advantages of heavy ion RBS in the near-surface characterization of semiconductors with masses >50 amu. Important questions such as mass resolution, depth resolution, isotopic effects, absolute sensitivity and minimum detectable limit of impurities were investigated. Ion implantations and multiple layered structures on GaAs substrates as well as metal germanide systems were studied. The development of the method in conjunction with the channeling technique is also discussed. (ERA citation 10:018722)