Application of Cross-Sectional Transmission Electron Microscopy to the Characterization of Ion-Implanted Semiconductors

摘要

Direct implantation of dopant ions is the most precise method for obtaining a desired dopant profile in a semiconductor substrate. The most efficient approach is to understand the mechanisms of defect formation and annealing so that guidelines for choosing a set of implantation/annealing conditions can be determined. Since implantation depths are usually much less than one micrometer, suitable defect characterization techniques must demonstrate high spatial resolution. In this paper, the application of XTEM to understanding the origins and annealing behavior of implantation-related defects is discussed. These applications are illustrated with examples which come primarily from work done at Lawrence Berkeley Laboratory. (ERA citation 10:034218)