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TEM Combined with Al/sub X/Ga/sub 1-X/ as Marker Layers as a Technique for the Study of GaAs MBE Growth

机译:TEm结合al / sub X / Ga / sub 1-X /作为标记层作为研究Gaas mBE生长的技术

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It is demonstrated that transmission electron microscopy of cross-section specimens combined with Al/sub x/Ga/sub 1-x/As marker layers can be used to monitor MBE (molecular beam epitaxy) growth of GaAs films. A similar method could be used to study growth morphology of any other film provided that very small mismatch marker layers are available. This technique has potential for quantitative assessment of the surface diffusion during thin film deposition. (ERA citation 10:021231)

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