Noble-Gas Ion Bombardment on Clean Silicon Surfaces, Studied Using Ellipsometry and Desorption

摘要

This thesis describes a study concerning the influence of low-energy (0.5 - 2.5 keV) noble-gas ion bombardment (He/sup +/, Ne/sup +/, Ar/sup +/, kr/sup +/) on clean silicon surfaces (c-Si: (111), (110), (100)), carried out in an ultrahigh-vacuum (UHV) system. During ion bombardment, spectroscopic ellipsometry has been used to characterize the different processes. The low-dose behaviour reflects the amorphism (a loss of long-range order) of the original c-Si surface layer. In order to explain the high-dose behaviour, desorption experiments have been carried out, while information is obtained concerning the anneal behaviour of the damaged implanted surface layer. (Auth.). Includes Dutch summary; 143 refs.; 98 figs.; 65 tabs. (Atomindex citation 18:077663)