Effects of 450 deg C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers

摘要

This study investigated effects of 450 deg C pre-anneal upon oxygen precipitation during subsequent low (700 deg C)-medium (950 deg C) temperature two-step furnace anneals. Measurements were made on lightly B-doped CZ Si with low and high carbon concentrations, and on low carbon content medium and heavily B-doped CZ Si. Our oxygen precipitation rate and oxide precipitate morphology data show that both carbon and boron significantly affect oxygen precipitation rates and plate-like and polyhedral oxide precipitates coexist in wafers with low boron and carbon levels. (ERA citation 12:004420)