Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

摘要

Effects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal anneals. Even though oxide precipitate density increases with increasing carbon levels, C/sub s/, synchrotron radiation section topographs of processed high carbon content wafers (C/sub s/ approx.4ppMa) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO sub 2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials. 5 refs., 1 fig., 1 tab. (ERA citation 13:018702)