Development of a CMOS (Complementary Metal Oxide Semiconductors) Process Using High Energy Ion Implantation

摘要

The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.). Includes Dutch summary; 98 references, 70 figures, 7 tables. (ERA citation 12:029737)