Strained quantum well modulation-doped InGaSb/AlGaSb structures grown by molecular beam epitaxy

摘要

Strained single quantum well InGaSb/AlGaSb structures for field-effect transistor applications have been grown by molecular beam epitaxy. Modulation-doped p-type structures have been characterized by a variety of techniques, including Hall effect, Shubnikov-de Haas measurements, and cyclotron resonance. These structures exhibit improved hole transport in comparison to similar GaSb/AlGaSb structures as a result of strain-splitting of the valence band. P-channel field-effect transistors fabricated in this system exhibited a maximum transconductance of 51 and 161 ms /mm at 300 and 77K, respectively, for a 1.2(mu)m gate-length device.