Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing.

摘要

Ion implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) Al(sub 2)O(sub 3). Both types of nanocrystals are three-dimensionally aligned with respect to the Al(sub 2)O(sub 3) matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in Al(sub 2)O(sub 3). Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.