首页> 外国专利> Ultrafine crystal layer forming method, machine parts with an ultrafine crystal layer which is generated by the ultrafine crystal layer forming method, and the mechanical component manufacturing method for manufacturing the mechanical parts, as well as the nanocrystal layer forming method, the Machine component comprising a nanocrystal layer produced by the nanocrystal layer forming method, and the mechanical component manufacturing method for manufacturing the machine parts

Ultrafine crystal layer forming method, machine parts with an ultrafine crystal layer which is generated by the ultrafine crystal layer forming method, and the mechanical component manufacturing method for manufacturing the mechanical parts, as well as the nanocrystal layer forming method, the Machine component comprising a nanocrystal layer produced by the nanocrystal layer forming method, and the mechanical component manufacturing method for manufacturing the machine parts

机译:超微晶层形成方法,通过超微晶层形成方法产生的具有超微晶层的机械零件,以及用于制造机械零件的机械零件制造方法以及纳米晶层形成方法,该机械零件包括:通过纳米晶体层形成方法生产的纳米晶体层,以及用于制造机械零件的机械部件制造方法

摘要

Providing an ultrafine crystal layer forming method of can and at low cost ultrafine crystal layer, etc., is generated stably on the surface of metal products. In comparison with the workpiece W, to perform the drilling of the hole 1 by the drill D, to produce ultrafine crystal layer C1 and giving Daiibitsu the inner peripheral surface of the hole 1. In this case, and give the plastic working of the true strain at least one or more inner peripheral surface of the hole 1, is maintained at a temperature range below the melting point and Ac1 transformation point or higher material temperature of the machined surface of the one hole. Or, to be maintained at a temperature that does not exceed the Ac1 transformation point. Thus, it is possible and at low cost ultrafine crystal layer C1, it can be generated stably on the inner peripheral surface of the hole 1.
机译:提供一种能够以低成本稳定地在金属制品的表面上产生罐的超微晶层形成方法的超微晶层等。与工件W相比,通过钻头D对孔1进行钻孔,以产生超细晶体层C1,并在孔1的内周面赋予Daiibitsu。在这种情况下,进行真正的塑性加工。孔1的至少一个或多个内周表面的应变保持在低于熔点和Ac1相变点的温度范围或一个孔的加工表面的较高材料温度。或者,要保持在不超过Ac1相变点的温度下。因此,可以以低成本在孔1的内周面上稳定地生成超微晶层C1。

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