Formation of Si nanocrystals in multilayered nanoperiodic Al2O3/SiOx/Al2O3/SiOx/.../Si(100) structures: Synchrotron and photoluminescence data

摘要

The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al2O3/SiO (x) /Al2O3/SiO (x) /.../Si(100) structures annealed at temperatures of 500-1100A degrees C are reported. The data show that, upon high-temperature annealing (similar to 1100A degrees C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4-1.52 eV.